Rohm SemiconductorJapan
MOSFET P-CH 12V 1.3A TUMT3
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage12 V
Continuous drain current1.3 A
On-resistance260 mΩMax · 1.3A
Gate threshold voltage1 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Power Dissipation (Max) | 800mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 3-SMD, Flat Leads |
| Supplier Device Package | TUMT3 |
| Other | |
| Base Product Number | RZF013 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 6 V |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 1.3A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
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