Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 600V 8A DO214AB
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View full reportTechnical parameters
Key specs
Reverse voltage600 V
Average rectified current8 A
Forward voltage985 mVMax · 8 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 985 mV @ 8 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) |
| Other | |
| Base Product Number | S8JCHV7 |
| Capacitance @ Vr, F | 48pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | Automotive, AEC-Q101 |
| Speed | Standard Recovery >500ns, > 200mA (Io) |