SCTUnited States

SCT52241STDR

Gate Drivers

IGBT/MOSFET

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Technical parameters

Key specs

Driven configurationLow-side
Supply voltage4.5 ~ 24 V
Power
工作电压4.5V~24V
Other
上升时间(tr)8ns
负载类型MOSFET；IGBT
驱动配置低边

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