Rohm SemiconductorJapan

SH2115WN

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650V 200A, FRD Bare Die for IGBT Module

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Technical parameters

Environment and package
Operating Temperature (Max.)[°C]175
Operating Temperature (Min.)[°C]-40
Other
I F (Nominal) [A]200
SeriesFRD: Fast recovery diode
V F (Typ.) [V]1.45
V RM [V]650

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