Vishay SiliconixUnited States
MOSFET N-CH 20V 1.3A SC89-6
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current1.3 A
On-resistance91 mΩMax · 1.3A
Gate threshold voltage1.55 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 236mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SC-89 (SOT-563F) |
| Other | |
| Base Product Number | SI1058 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 10 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 1.3A, 4.5V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.55V @ 250µA |
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