Siliup(矽普)China
SP2011ACTM
Transistors - FETs, MOSFETs - SingleN+P MOSFET产品，耐压：20V,电流：N 35A/P -38A,Rdson:N 8mR/P 9mR
All alternatives
View full reportTechnical parameters
Key specs
Drain-source voltage20 V
Continuous drain current38 A
On-resistance15 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 38A |
| Other | |
| 导通电阻(RDS(on)) | 15mΩ@2.5V |
| 耗散功率(Pd) | 32.8W |