AF(晶岳)China
IGBT semiconductor device
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-220 |
| Other | |
| IC (A) | 15 |
| Part No. | SSC65T15GT4 |
| Technology | IGBT+FRD |
| VCE(sat) (V) | 1.6 |
| VCES(V) | 650 |
| VGES (±V) | ±20 |
| VGE(th) Max. (V) | 5.9 |
| VGE(th)Min. (V) | 5.4 |