AF(晶岳)China
Schottky Barrier Diode semiconductor device
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | SOD-323 |
| Other | |
| Conf. | SBD |
| IF(A) | 2 |
| IO(A) | 0.25 |
| IR(uA) | 0.1 |
| Part No. | SSCSBAS321D2 |
| VF(V) | 0.95 |
| VR(V） | 250 |
Schottky Barrier Diode semiconductor device
| Environment and package | |
|---|---|
| Package | SOD-323 |
| Other | |
| Conf. | SBD |
| IF(A) | 2 |
| IO(A) | 0.25 |
| IR(uA) | 0.1 |
| Part No. | SSCSBAS321D2 |
| VF(V) | 0.95 |
| VR(V） | 250 |