AF(晶岳)China
Schottky Barrier Diode semiconductor device
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-277B |
| Other | |
| Conf. | SBD |
| IF(A) | 150 |
| IO(A) | 5 |
| IR(uA) | 50-500 |
| Part No. | SSCSSS5XTC |
| VF(V) | 0.55-0.95 |
| VR(V） | 20-200 |
Schottky Barrier Diode semiconductor device
| Environment and package | |
|---|---|
| Package | TO-277B |
| Other | |
| Conf. | SBD |
| IF(A) | 150 |
| IO(A) | 5 |
| IR(uA) | 50-500 |
| Part No. | SSCSSS5XTC |
| VF(V) | 0.55-0.95 |
| VR(V） | 20-200 |