AF(晶岳)China
Schottky Barrier Diode semiconductor device
All alternatives
View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-277B |
| Other | |
| Conf. | SBD |
| IF(A) | 8 |
| IR(uA) | 500 |
| Part No. | SSCSSS860LTC |
| VF(V) | 0.4 |
| VR(V） | 60 |
Schottky Barrier Diode semiconductor device
| Environment and package | |
|---|---|
| Package | TO-277B |
| Other | |
| Conf. | SBD |
| IF(A) | 8 |
| IR(uA) | 500 |
| Part No. | SSCSSS860LTC |
| VF(V) | 0.4 |
| VR(V） | 60 |