AF(晶岳)China
ESD semiconductor device
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | SOD-323 |
| Other | |
| Chan. | 1 |
| CJ (pF) | 450 |
| Dir. | Uni. |
| IPP_Max @8/20us (A) | 20 |
| IR (uA) | 40 |
| Part No. | SSCT3V321D2 |
| PPP_Max(W) | 350 |
| VBR (V) | 4 |
| VC_Max (V) | 10.5 |
| VRWM (V) | 3.3 |