VBsemi(微碧半导体)China
SSF2610E-VB
Transistors - FETs, MOSFETs - SingleSOP8；2个N—Channel沟道,20V；10A；RDS(ON)=11mΩ@VGS=10V,VGS=12V；Vth=0.5~1V；
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View full reportTechnical parameters
Key specs
Drain-source voltage20 V
Continuous drain current10 A
On-resistance12 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 10A |
| Other | |
| 导通电阻(RDS(on)) | 12mΩ@2.5V |
| 耗散功率(Pd) | 2.7W |