VBsemi(微碧半导体)China
SSF2627-VB
Transistors - FETs, MOSFETs - SingleSOP8；P—Channel沟道,-20V；-8A；RDS(ON)=16mΩ@VGS=4.5V,VGS=15V；Vth=-0.6~-2V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current13 A
On-resistance40 mΩMax · 1.8V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 13A |
| Other | |
| 导通电阻(RDS(on)) | 40mΩ@1.8V |
| 数量 | 1个P沟道 |