SSM2275

ActiveAudio Amplifiers8-Lead Narrow Body SOIC

The SSM2275 and SSM2475 use the Butler Amplifier front end, which combines both bipolar and FET transistors to offer the accuracy and low noise performance of bipolar transistors and the slew rates and sound quality of FETs. This product family includes dual and quad rail-to-rail output audio amplifiers that achieve lower production costs than the industry standard OP275 (the first Butler Amplifier offered by Analog Devices). This lower cost amplifier also offers operation from a single 5 V supply, in addition to conventional ±15 V supplies. The ac performance meets the needs of the most demanding audio applications, with 8 MHz bandwidth, 12 V/µs slew rate and extremely low distortion.

SSM2275 is a dual-channel rail-to-rail output audio amplifier with a Butler front end, supporting single 5V or dual ±15V supplies, 8MHz bandwidth, 12V/µs slew rate, low noise and distortion, available in SOIC, DIP, and microSOIC packages.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

23 items

Parameter	Value and test conditions	Source
Package	8-Lead Narrow Body SOIC (SO-8), 8-Lead Plastic DIP (N-8), 8-Lead microSOIC (RM-8)
Operating Temperature Range	-40°C < TA < +85°C
Recommended Operating Conditions	VS = ±15 V, TA = +25°C, VCM = 0 V; VS = +5 V, TA = +25°C, VCM = 2.5 V
Absolute Maximum Ratings	Supply Voltage (VS): ±18 V; Input Voltage (VIN): ±15 V; Differential Input Voltage: ±15 V; Storage Temperature Range: -65°C < TS < +150°C; Junction Temperature Range: -65°C < TS < +150°C; Lead Temperature Range (Soldering, 60 sec): +300°C; ESD Susceptibility: 2,000 V
Supply Voltage	Single or Dual-Supply Operation; Single 5 V supply or conventional ± 15 V supplies
Output Current	High Output Current: 650 mA; Output stage can sink or source up to 50 mA
Supply Current/Amplifier	Typ 1.7 mA, Max 2.9 mA (VO = 0 V, VS = ±15 V, TA = +25°C); Typ 1.75 mA, Max 3.0 mA (-40°C ≤ TA ≤ +85°C)
Gain Bandwidth Product	Typ 8 MHz (VS = ±15 V); Typ 6 MHz (VS = +5 V, RL = 2 kΩ \|\| 10 pF)
Slew Rate	Min 9 V/µs, Typ 12 V/µs (RL = 2 kΩ \|\| 50 pF, VS = ±15 V); Typ 12 V/µs (VS = +5 V)
Total Harmonic Distortion	Typ 0.0006% (RL = 10 kΩ, f = 1 kHz, VO = 1 VRMS)
Voltage Noise Spectral Density	Typ 8 nV/√Hz (f > 1 kHz); Low Noise: 7 nV/√Hz
Offset Voltage	Typ 1 mV, Max 4 mV (TA = +25°C); Typ 1 mV, Max 6 mV (-40°C ≤ TA ≤ +85°C)
Input Bias Current	Typ 250 nA, Max 400 nA (TA = +25°C); Typ 300 nA, Max 500 nA (-40°C ≤ TA ≤ +85°C)
Common-Mode Rejection Ratio	Min 80 dB, Typ 100 dB (-12.5 V ≤ VCM ≤ +12.5 V, VS = ±15 V); Min 25 V/mV, Typ 60 V/mV (RL = 2 kΩ, -0.5 V ≤ VO ≤ +4.5 V, VS = +5 V)
Power Supply Rejection Ratio	Min 85 dB, Typ 110 dB (±2.5 V ≤ VS ≤ ±18 V, TA = +25°C); Min 80 dB, Typ 105 dB (-40°C ≤ TA ≤ +85°C)
Output Voltage, High	Min 14 V, Typ 14.5 V (IL ≤ 20 mA, VS = ±15 V); Min 4.2 V, Typ 4.5 V (IL ≤ -15 mA, VS = +5 V)
Output Voltage, Low	Typ -14 V, Max -13.5 V (IL = 20 mA, VS = ±15 V); Typ 0.6 V, Max 1.0 V (IL ≤ -15 mA, VS = +5 V)
Output Short Circuit Current Limit	Min ±25 mA, Typ ±50 mA, Max ±75 mA (-40°C ≤ TA ≤ +85°C, VS = ±15 V); Typ 40 mA (VS = +5 V)
Channel Separation	Typ 128 dB (RL = 2 kΩ, f = 1 kHz)
Input Voltage Range	Min -14 V, Max +14 V (VS = ±15 V); Min 0.3 V, Max 4.7 V (VS = +5 V)
Thermal Resistance	θJA: 158 °C/W (8-Lead SOIC), 206 °C/W (8-Lead microSOIC), 103 °C/W (8-Lead Plastic DIP); θJC: 43 °C/W (8-Lead SOIC/microSOIC/DIP)
Stability	Unity Gain Stable; Stable even when driving capacitive loads
Protection	Input Overvoltage Protection; Output is not short-circuit protected (external resistor recommended to limit current to ±40 mA)

Pinout and package

Package: **8-Lead Narrow Body SOIC (SO-8), 8-Lead Plastic DIP (N-8), 8-Lead microSOIC (RM-8)**

Pin	Name	Function
1	OUT	A (Channel A Output)
2		-IN A (Channel A Inverting Input)
3		+IN A (Channel A Non-inverting Input)
4	V-	(Negative Supply)
5		+IN B (Channel B Non-inverting Input)
6		-IN B (Channel B Inverting Input)
7	OUT	B (Channel B Output)
8	V+	(Positive Supply)

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