VBsemi(微碧半导体)China
STGD6M65DF2-VB
IGBT Devices and Modules - Unspecified Type集射极击穿电压(Vces):600/650(V)；集电极电流(Ic)：7A栅极阈值电压(Vge(th))：1.65V@ VGE=15V
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View full reportTechnical parameters
Key specs
Collector-emitter voltage600 V
Collector current14 AMax
Power55 WMax
| Power | |
|---|---|
| 集射极击穿电压(Vces) | 600V |
| 集电极电流(Ic) | 14A |
| 集电极脉冲电流(Icm) | 21A |
| Other | |
| 耗散功率(Pd) | 55W |
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