STMicroelectronicsSwitzerland
N-CHANNEL 600 V, 0.084 OHM TYP.,
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current45 A
On-resistance84 mΩMax · 22.5A
Gate threshold voltage4.75 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 174W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2468 pF @ 100 V |
| Mfr | STMicroelectronics |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 22.5A, 10V |
| Series | MDmesh™ DM6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
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