VBsemi(微碧半导体)China
TO220；N—Channel沟道,200V；30A；RDS(ON)=110mΩ@VGS=10V,VGS=20V；Vth=2~3V；
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Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current30 A
On-resistance110 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 200V |
| 连续漏极电流(Id) | 30A |
| Other | |
| 导通电阻(RDS(on)) | 110mΩ@10V |
| 数量 | 1个N沟道 |