GME(银河微电)China
30V,0.1A,General Purpose PNP Bipolar Transistor
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View full reportTechnical parameters
| Power | |
|---|---|
| 基极电流 IB (mA) | 0.5 |
| 电流放大倍数 hFE max | 800 |
| 电流放大倍数 hFE min | 420 |
| 集电极-发射极击穿电压 VCEO (V) | 30 |
| 集电极电流 IC (A) | 0.1 |
| AC and DC characteristics | |
| 特征频率 fT min (MHz) | 100 |
| Environment and package | |
| REACH 合规 | YES |
| RoHS 合规 | YES |
| 封装 Package | SOT-23 |
| Other | |
| AEC-Q 车规认证 | YES |
| 出口管制编码 ECCN | EAR99 |
| 无卤 Halide-free | YES |
| 无铅 Pb-free | YES |
| 最低结温 Tj min (℃) | -65 |
| 最大耗散功率 PD (mW) | 0.25 |
| 最高结温 Tj max (℃) | 150 |
| 极性 Polarity | PNP |
| 生命周期 Marketing Status | Active |
| 饱和压降 VCE(sat) (V) | 0.3 |
Documents
DatasheetDatasheet · 633.5 KB · 2026-09-23EnvironmentalEnvironmental · 1.5 MB · 2026-09-23Package DrawingPackage Drawing · 941.5 KB · 2026-09-23EnvironmentalEnvironmental · 874.0 KB · 2026-09-23Package DrawingPackage Drawing · 382.7 KB · 2026-09-23Package DrawingPackage Drawing · 303.4 KB · 2026-09-23
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