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Technical parameters

Power
Input bias current (max) (pA)60
Input common mode headroom (to negative supply) (typ) (V)3
Input common mode headroom (to positive supply) (typ) (V)1
Iq per channel (typ) (mA)0.312
Number of channels2
Output swing headroom (to negative supply) (typ) (V)1.3
Output swing headroom (to positive supply) (typ) (V)-1.3
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)7
AC and DC characteristics
CMRR (typ) (dB)90
Offset drift (typ) (µV/°C)6
Slew rate (typ) (V/µs)3.4
Vos (offset voltage at 25°C) (max) (mV)2
Environment and package
Operating temperature range (°C)-55 to 125
Other
ArchitectureFET
GBW (typ) (MHz)2
Iout (typ) (A)0.045
Rail-to-railIn to V+
RatingMilitary
Vn at 1 kHz (typ) (nV√Hz)40

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