VBsemi(微碧半导体)China
UF3205L-TQ2-R-VB
Transistors - FETs, MOSFETs - SingleTO263；N—Channel沟道,60V；150A；RDS(ON)=4mΩ@VGS=10V,VGS=20V；Vth=2~4V；
All alternatives
View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current150 A
On-resistance4 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 150A |
| Other | |
| 导通电阻(RDS(on)) | 4mΩ@10V |
| 耗散功率(Pd) | 220W |