VBsemi(微碧半导体)China
UT2301ZG-AE3-R-VB
Transistors - FETs, MOSFETs - SingleSOT23；P—Channel沟道,-20V；-4A；RDS(ON)=57mΩ@VGS=4.5V,VGS=12V；Vth=-0.81V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current3.5 A
On-resistance60 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 3.5A |
| Other | |
| 导通电阻(RDS(on)) | 60mΩ@10V,3A |
| 数量 | 1个P沟道 |