VBsemi(微碧半导体)China
UT2309L-AE3-R-VB
Transistors - FETs, MOSFETs - SingleSOT23；P—Channel沟道,-30V；-5.6A；RDS(ON)=46mΩ@VGS=10V,VGS=20V；Vth=-0.5~-2V；
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View full reportTechnical parameters
Key specs
Drain-source voltage30 V
Continuous drain current5.6 A
On-resistance54 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 5.6A |
| Other | |
| 导通电阻(RDS(on)) | 54mΩ@4.5V |
| 耗散功率(Pd) | 2.5W |