VBsemi(微碧半导体)China
UT3416G-AE3-R-VB
Transistors - FETs, MOSFETs - SingleSOT23；N—Channel沟道,30V；6.5A；RDS(ON)=30mΩ@VGS=10V,VGS=±20V；Vth=0.7~2V；
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current6.5 A
On-resistance33 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 6.5A |
| Other | |
| 导通电阻(RDS(on)) | 33mΩ@4.5V |
| 数量 | 1个N沟道 |