VBsemi(微碧半导体)China
UT3N01ZL-AE2-R-VB
Transistors - FETs, MOSFETs - SingleSOT23；N—Channel沟道,60V；0.25A；RDS(ON)=2800mΩ@VGS=10V,VGS=±20V；Vth=1~2.5V；
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current250 mA
On-resistance2.8 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 250mA |
| Other | |
| 导通电阻(RDS(on)) | 2.8Ω@10V |
| 耗散功率(Pd) | 300mW |