VBsemi(微碧半导体)China
UT3N06L-AE3-R-VB
Transistors - FETs, MOSFETs - SingleSOT23；N—Channel沟道,60V；4A；RDS(ON)=75mΩ@VGS=10V,VGS=±20V；Vth=1~3V；
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current4 A
On-resistance86 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 4A |
| Other | |
| 导通电阻(RDS(on)) | 86mΩ@4.5V |
| 耗散功率(Pd) | 1.66W |