VBsemi(微碧半导体)China
UT4406L-S08-R-VB
Transistors - FETs, MOSFETs - SingleSOP8；N—Channel沟道,30V；13A；RDS(ON)=8mΩ@VGS=10V,VGS=±20V；Vth=1~3V；
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View full reportTechnical parameters
Key specs
Drain-source voltage30 V
Continuous drain current13 A
On-resistance8 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 13A |
| Other | |
| 导通电阻(RDS(on)) | 8mΩ@10V,10A |
| 耗散功率(Pd) | 2.2W |