VBsemi(微碧半导体)China
UT4413L-S08-R-VB
Transistors - FETs, MOSFETs - SingleSOP8；P—Channel沟道,-30V；-18A；RDS(ON)=5mΩ@VGS=10V,VGS=20V；Vth=-1~-2.2V；
All alternatives
View full reportTechnical parameters
Key specs
Drain-source voltage30 V
Continuous drain current11 A
On-resistance5 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 11A |
| Other | |
| 导通电阻(RDS(on)) | 5mΩ@10V,15A |
| 耗散功率(Pd) | 3.6W |