VBsemi(微碧半导体)China
UT70P03L-TN3-R-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；是一款单P沟道场效应晶体管，采用Trench工艺制造，适用于多种领域和模块。TO252；P—Channel沟道,-30V；-60A；RDS(ON)=9mΩ@VGS=10V,VGS=±20V；Vth=-1~-3V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current70 A
On-resistance13 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 70A |
| Other | |
| 导通电阻(RDS(on)) | 13mΩ@10V,30A |
| 数量 | 1个P沟道 |