VBsemi(微碧半导体)China
UTD405L-TN3-R-VB
Transistors - FETs, MOSFETs - SingleTO252；P—Channel沟道,-30V；-38A；RDS(ON)=33mΩ@VGS=10V,VGS=20V；Vth=-1~-2.5V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current38 A
On-resistance46 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 38A |
| Other | |
| 导通电阻(RDS(on)) | 46mΩ@4.5V |
| 数量 | 1个P沟道 |