Microsemi CorporationUnited States

UTV080

ObsoleteTransistors - Bipolar (BJT) - RF

RF TRANS NPN 28V 860MHZ 55JV

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Technical parameters

Power
Current - Collector (Ic) (Max)2.5A
Power - Max65W
Voltage - Collector Emitter Breakdown (Max)28V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 500mA, 5V
Frequency - Transition470MHz ~ 860MHz
Gain9dB ~ 10dB
Noise Figure (dB Typ @ f)-
Environment and package
Mounting TypeChannel, DIN Rail Mount
Operating Temperature200°C(TJ)
PackageBulk
Package / Case55JV
Supplier Device Package55JV
Other
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor TypeNPN

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