VBsemi(微碧半导体)China
台积电流片，长电科技封装；是一款双N型MOSFET，采用Trench工艺，适用于多种电子领域和模块。SOT23-6；2个N—Channel沟道,60V；4.2A；RDS(ON)=48mΩ@VGS=10V,VGS=20V；Vth=1.2~2.5V；
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current4.2 A
Gate threshold voltage1.2 VMax
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 4.2A |
| 阈值电压(Vgs(th)) | 1.2V |
| Other | |
| 数量 | 2个N沟道 |