VBsemi(微碧半导体)China

1. VBBD7322 Product Introduction VBBD7322 is a high-performance single N-channel MOSFET in a compact DFN8(3x2)-B package. This MOSFET is designed for efficient switching applications and has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. VBBD7322 uses advanced Trench technology with a threshold voltage (Vth) of 1.5V. At a gate-source voltage of 4.5V, its on-resistance is 19mΩ, while at a gate-source voltage of 10V, the on-resistance is reduced to 16mΩ. This MOSFET supports a continuous drain current (ID) of up to 9A, which is very suitable for applications requiring efficient switching and low conduction losses.