VBsemi(微碧半导体)China
The VBGL1105 is a single-channel N-type MOSFET with a 100V saturated drain-source voltage and a standard ±20V gate-source voltage range. The threshold voltage is 3V, and the drain-source on-resistance is 4mΩ when the gate-source voltage is 10V. The maximum drain current is 125A, using SGT technology, and the package is TO263.
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| VB Package | TO263 |
| Other | |
| Configuration | Single-N |
| ID(A) | 125A |
| Rds10 | 4(mΩ) |
| Technology | SGT |
| VDS(V) | 100V |
| VGS | 20（±V） |
| Vthyp（V） | 3V |