VBsemi(微碧半导体)China
The VBGL7802 is a unipolar N-channel field effect transistor with a drain-source voltage of 80V and a drain current of 250A. The device uses Silicon Germanium Trench (SGT) technology and has a drain-source resistance of 1.7mΩ and a threshold voltage of 3.5V.
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| VB Package | TO263-7L |
| Other | |
| Configuration | Single-N |
| ID(A) | 250A |
| Rds10 | 1.7(mΩ) |
| Technology | SGT |
| VDS(V) | 80V |
| VGS | 20（±V） |
| Vthyp（V） | 3.5V |
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