VBsemi(微碧半导体)China
VBMB2152M
Transistors - FETs, MOSFETs - SingleTO220F；P—Channel沟道,-150V；-15A；RDS(ON)=160mΩ@VGS=10V,VGS=20V；Vth=-1~-2.5V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage150 V
On-resistance200 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 150V |
| Other | |
| 导通电阻(RDS(on)) | 200mΩ@10V |
| 数量 | 1个P沟道 |