VBsemi(微碧半导体)China
TO220；N—Channel沟道,600V；8A；RDS(ON)=780mΩ@VGS=10V,VGS=30V；Vth=2~4V；
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Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current8 A
| Power | |
|---|---|
| 漏源电压(Vdss) | 600V |
| 连续漏极电流(Id) | 8A |
| Other | |
| 数量 | 1个N沟道 |
| 耗散功率(Pd) | 170W |