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Technical parameters

Datasheet-verified parameters

27 items
ParameterValue and test conditionsSource
PackageSO-8, DIP-8
Operating temperatureTJ: Internally limited; TC: -40 to 150 °C
Storage temperature-55 to 150 °C
Switching drain source voltage-0.3 ... 730 V (TJ = 25 ... 125 °C)
Start-up drain source voltage-0.3 ... 400 V (TJ = 25 ... 125 °C)
Supply voltage0 ... 50 V
Feedback current3 mA
Drain-source voltageMin 730 V (ID = 1 mA; VFB = 2 V)
OFF state drain currentMax 0.1 mA (VDS = 500 V; VFB = 2 V; TJ = 125 °C)
Static drain-source ON state resistanceTyp 15 Ω (ID = 0.4 A); Max 31 Ω (ID = 0.4 A; TJ = 100 °C)
Fall timeTyp 100 ns (ID = 0.2 A; VIN = 300 V)
Rise timeTyp 50 ns (ID = 0.4 A; VIN = 300 V)
Drain capacitanceTyp 40 pF (VDS = 25 V)
Start-up charging currentTyp -1 mA (100 V ≤ VDS ≤ 400 V; VDD = 0 V ... VDDon)
Operating supply current not switchingTyp 3 mA, Max 5 mA (IFB = 2 mA)
Operating supply current switchingTyp 4.5 mA (IFB = 0.5 mA; ID = 50 mA)
Restart duty-cycleTyp 16 %
VDD undervoltage shutdown thresholdMin 7 V, Typ 8 V, Max 9 V
VDD start-up thresholdMin 13 V, Typ 14.5 V, Max 16 V
VDD threshold hysteresisMin 5.8 V, Typ 6.5 V, Max 7.2 V
VDD overvoltage thresholdMin 38 V, Typ 42 V, Max 46 V
Typical power capability (European)SO-8: 12 W; DIP-8: 20 W (195 - 265 Vac)
Typical power capability (US / Wide range)SO-8: 7 W; DIP-8: 12 W (85 - 265 Vac)
Switching frequencyFixed 60 kHz
VDD voltage range9 V to 38 V
Electrostatic discharge: Machine model200 V (R = 0 Ω; C = 200 pF)
Electrostatic discharge: Charged device model1.5 kV
All parameters (7)ExpandCollapse
AC and DC characteristics
Switching frequency60 kHz
Environment and package
PackageSO-8, DIP-8
Other
BV_DSS730 V (Min)
r_DS(on)15 Ω (Typ)
T_C-40 to 150 °C
V_DD0 ... 50 V
V_DDovp46 V (Max)

Pinout and package

Figure 2. Pin connection SO-8
Figure 2. Pin connection SO-8
Package: SO-8, DIP-8
PinNameFunctionSource
1SOURCE: Power MOSFET source and circuit ground reference
2SOURCE: Power MOSFET source and circuit ground reference
3FB: Feedback input. The useful voltage range extends from 0 V to 1 V, and defines the peak drain MOSFET current. The current limitation, which corresponds to the maximum drain current, is obtained for a FB pin shorted to the SOURCE pin.
4VDD: Power supply of the control circuits. Also provides a charging current during start up thanks to a high voltage current source connected to the drain.
5DRAIN: Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor.
6DRAIN: Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor.
7DRAIN: Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor.
8DRAIN: Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor.

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