All alternatives

View full report

Technical parameters

Datasheet-verified parameters

26 items
ParameterValue and test conditionsSource
PackageSO-8, DIP-8
Junction operating temperatureInternally limited
Storage temperature-55 to 150 °C
Switching drain source voltage-0.3 ... 730 V (TJ = 25 ... 125 °C)
Start-up drain source voltage-0.3 ... 400 V (TJ = 25 ... 125 °C)
Supply voltage0 ... 50 V
Feedback current3 mA
Drain-source voltageMin 730 V (ID = 1 mA; VFB = 2 V)
OFF State drain currentMax 0.1 mA (VDS = 500 V; VFB = 2 V; TJ = 125 °C)
Static drain-source ON state resistanceTyp 27 Ω, Max 30 Ω (ID = 0.2 A)
Static drain-source ON state resistanceMax 54 Ω (ID = 0.2 A; TJ = 100 °C)
Fall timeTyp 100 ns (ID = 0.1 A; VIN = 300 V)
Rise timeTyp 50 ns (ID = 0.2 A; VIN = 300 V)
Drain capacitanceTyp 40 pF (VDS = 25 V)
Start-up charging currentTyp -1 mA (100 V ≤ VDS ≤ 400 V; VDD = 0 V ... VDDon)
Operating supply current not switchingTyp 3 mA, Max 5 mA (IFB = 2 mA)
Operating supply current switchingTyp 4.5 mA (IFB = 0.5 mA; ID = 50 mA)
Restart duty-cycleTyp 16 %
VDD undervoltage shutdown thresholdMin 7 V, Typ 8 V, Max 9 V
VDD start-up thresholdMin 13 V, Typ 14.5 V, Max 16 V
VDD threshold hysteresisMin 5.8 V, Typ 6.5 V, Max 7.2 V
VDD overvoltage thresholdMin 38 V, Typ 42 V, Max 46 V
Typical power capability (European)8 W for SO-8, 13 W for DIP-8 (195 - 265 Vac)
Typical power capability (US / Wide range)5 W for SO-8, 8 W for DIP-8 (85 - 265 Vac)
Switching frequencyFixed 60 kHz
VDD voltage range9 V to 38 V
All parameters (6)ExpandCollapse
AC and DC characteristics
Switching frequency60 kHz
Environment and package
PackageSO-8, DIP-8
Other
BV_DSS730 V (Min)
r_DS(on)27 Ω (Typ)
T_C-40 to 150 °C
V_DD0 ... 50 V

Pinout and package

Figure 2. Pin connection SO-8
Figure 2. Pin connection SO-8
Package: SO-8, DIP-8
PinNameFunctionSource
1SOURCE: Power MOSFET source and circuit ground reference
2SOURCE: Power MOSFET source and circuit ground reference
3FB: Feedback input. The useful voltage range extends from 0 V to 1 V, and defines the peak drain MOSFET current. The current limitation, which corresponds to the maximum drain current, is obtained for a FB pin shorted to the SOURCE pin.
4VDD: Power supply of the control circuits. Also provides a charging current during start up thanks to a high voltage current source connected to the drain. For this purpose, an hysteresis comparator monitors the VDD voltage and provides two thresholds: VDDon (typically 14.5 V) at which the device is
5DRAIN: Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor.
6DRAIN: Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor.
7DRAIN: Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor.
8DRAIN: Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor.

Documents

Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.