WeEn SemiconductorsNetherlands
650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter. 650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.
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View full reportTechnical parameters
| Power | |
|---|---|
| Voltage class(V) | 650 |
| Environment and package | |
| Package | TO247 |
| Other | |
| Build-in Diode | Yes |
| Ic @100℃(A) | 30 |
| PD @25℃(W) | 312 |
| Technology | Trench Field-stop |
| VCE(sat)@25℃ Typ.(V) | 1.45 |
| VGEth(V) | 4.5 |
| VGE(V) | ±20 |