Results forIMZA65R020M2H
3 partsProduct search results3 total
- IMZA65R020M2H
Single FETs, MOSFETs
IMZA65R020M2H is an industrialCoolSiC™ G2 N-channel Power MOSFET in TO-247-4, 650 V, 20 mΩ, 83 A. Find documents, product parameters, and ordering information on the page.
- IMZA65R020M2HXKSA1
Single FETs, MOSFETs
- IMZA65R020M2HXKSA1-HXY
Single FETs, MOSFETs
该N沟道碳化硅MOSFET具有108A的连续漏极电流，漏源击穿电压达750V，导通电阻为20mΩ，栅源电压工作范围为-10V至+25V。器件利用碳化硅材料的高击穿场强和低导通损耗特性，在高频开关应用中表现出优异的效率与热稳定性。适用于高功率密度电源、可再生能源转换系统及各类高效电力电子装置，能够有效降低系统能耗并提升整体性能表现。
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