Results forIPW65R080CFDFKSA2
4 partsProduct search results4 total
- IPW65R080CFDFKSA2
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 650V 43.3A TO247-3
- IPW65R080CFDFKSA2
Single FETs, MOSFETs
MOSFET N-CH 650V 43.3A TO247-3
- IPW65R080CFDFKSA2-VB
Transistors - FETs, MOSFETs - Single
台积电流片，长电科技封装；TO247；N—Channel沟道,650V；47A；RDS(ON)=50(mΩ)@VGS=10V,VGS=±30V；Vth=3.5V；采用SJ_Multi-EPI技术
- IPW65R080CFDFKSA2-HXY
Single FETs, MOSFETs
该N沟道碳化硅MOSFET具有650V的漏源击穿电压（VDSS）、36A的连续漏极电流（ID）以及75mΩ的导通电阻（RDS(ON)），栅极驱动电压范围为-8V至+20V。得益于碳化硅材料的特性，器件在高频开关条件下表现出较低的导通与开关损耗，同时具备良好的热稳定性。适用于高效率电源、可再生能源转换系统及紧凑型电力电子设备，在提升能效和减小系统体积方面具有显著优势。
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