Results forIPW65R110CFDFKSA2
4 partsProduct search results4 total
- IPW65R110CFDFKSA2
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 650V 31.2A TO247-3
- IPW65R110CFDFKSA2
Single FETs, MOSFETs
MOSFET N-CH 650V 31.2A TO247-3
- IPW65R110CFDFKSA2-VB
Transistors - FETs, MOSFETs - Single
台积电流片，长电科技封装；TO247；N—Channel沟道；650V；47A；RDS(ON)=50(mΩ)@VGS=10V；VGS=±30V；Vth=3.5V；采用SJ_Multi-EPI技术；
- IPW65R110CFDFKSA2-HXY
Single FETs, MOSFETs
【联系：sales@hxymos.com】该N沟道碳化硅MOSFET具有32A的连续漏极电流和650V的漏源击穿电压，导通电阻典型值为94mΩ，在栅源电压范围-10V至+25V内稳定工作。器件采用碳化硅材料，具备优异的高温特性和开关性能，适用于高效率、高频率的电源转换场景。其低导通损耗与快速开关能力有助于提升系统整体能效，适合用于对体积与热管理有较高要求的电力电子装置中。
Showing 1–4 of 4
Can't find your part?
Our AI can look it up on the web and add it to the catalog. Or tell our team directly.
0 of 2 selected