Results forIPW65R190CFDFKSA2
4 partsProduct search results4 total
- IPW65R190CFDFKSA2
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 650V 17.5A TO247-3
- IPW65R190CFDFKSA2
Single FETs, MOSFETs
MOSFET N-CH 650V 17.5A TO247-3
- IPW65R190CFDFKSA2-VB
Transistors - FETs, MOSFETs - Single
台积电流片，长电科技封装；TO247；N—Channel沟道,650V；20A；RDS(ON)=160(mΩ)@VGS=10V,VGS=±30V；Vth=3.5V；采用SJ_Multi-EPI技术
- IPW65R190CFDFKSA2-HXY
Single FETs, MOSFETs
该N沟道碳化硅MOSFET具有800V的漏源击穿电压（VDSS）和25A的连续漏极电流（ID），导通电阻（RDS(ON)）为165mΩ，栅源电压范围为-8V至+20V。器件采用碳化硅材料，具备高耐压、低导通损耗及优异的高温工作能力，适用于对效率和功率密度要求较高的电力转换场景。其宽栅压范围增强了驱动兼容性，同时N沟道结构便于实现高效的开关控制，在高频运行条件下仍能保持稳定性能。
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