Results forIRLR8103VPBF
5 partsProduct search results5 total
- IRLR8103VPBF
Single FETs, MOSFETs
MOSFET N-CH 30V 91A DPAK
- IRLR8103VPBF
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 30V 91A DPAK
- IRLR8103VPBF-IR
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 30V 91A DPAK
- IRLR8103VPBF-IR
Transistors - FETs, MOSFETs - Single
- IRLR8103VPBF-HXY
Transistors - FETs, MOSFETs - Single
该N沟道MOSFET具备60A的连续漏极电流（ID）和30V的漏源电压（VDSS），导通电阻（RDS(ON)）为7毫欧。低导通电阻有助于在大电流工作条件下有效降低功率损耗与温升，提升整体运行效率。器件适用于高频率开关电源、电池管理系统、电动工具驱动电路以及各类需要高效能功率开关的电子设备中，能够满足对紧凑布局和热性能要求较高的应用场景。
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