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Technical parameters

Key specs

TypePNP
Collector-emitter voltage32 V
Collector current1 AMax
DC current gain82100mA
Power1 WMax
Power
Current - Collector Cutoff (Max)500nA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)32 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 100mA, 3V
Frequency - Transition190MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-243AA
Supplier Device PackageSOT-89-3
Other
Base Product Number2DB1132
MfrDiodes Incorporated
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA

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