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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage50 V
Collector current500 mAMax
DC current gain40150mA
Power800 mWMax
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max800 mW
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition80MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
PackageTube
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
Base Product Number2N16
MfrSTMicroelectronics
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5V @ 15mA, 150mA

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