Microchip TechnologyUnited States
POWER BJT
All alternatives
View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage60 V
Collector current750 mAMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 750 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 16MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Package | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5AA |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | - |
Documents
No documents are linked to this part yet.