Microchip TechnologyUnited States
POWER BJT
All alternatives
View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage80 V
Collector current5 AMax
DC current gain302A
Power3 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 300µA |
| Current - Collector (Ic) (Max) | 5 A |
| Power - Max | 3 W |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2A, 15V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Stud Mount |
| Operating Temperature | 175°C |
| Package | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Supplier Device Package | TO-61 |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200mA, 2A |
Documents
No documents are linked to this part yet.