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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage50 V
Collector current800 mAMax
DC current gain100150mA
Power800 mWMax
Power
Current - Collector Cutoff (Max)10nA
Current - Collector (Ic) (Max)800 mA
Power - Max800 mW
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
PackageBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
Base Product Number2N2219
MfrMicrochip Technology
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA

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