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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage60 V
Collector current50 mAMax
DC current gain22510mA
Power360 mWMax
Power
Current - Collector Cutoff (Max)2nA
Current - Collector (Ic) (Max)50 mA
Power - Max360 mW
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce225 @ 10mA, 5V
Frequency - Transition-
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
PackageBulk
Package / Case3-SMD, No Lead
Supplier Device PackageUB
Other
Base Product Number2N2484
MfrMicrochip Technology
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA

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